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PK608BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 3.5mΩ @VGS = 10V
ID 87A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
87 55 150
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
20 15.6
Avalanche Current
IAS 49
Avalanche Energy
L =0.1mH
EAS
120
Power Dissipation
TC = 25 °C TC = 100 °C
PD
50 20
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.4 1.
PK608BA Datasheet
