The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PK608DY
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 7mΩ @VGS =10V
30V 5.5mΩ @VGS =10V
ID Channel 50A Q1 58A Q2
PDFN 5X6P
1 : G1 2,3,4 : D1 5,6,7 : S2 8 : G2 9 : S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH.
Drain-Source Voltage
Q1 VDS
Q2
Gate-Source Voltage
Q1 VGS
Q2
Continuous Drain Current3
TC = 25 °C TC = 100°C
Q1 Q2 ID Q1 Q2
Pulsed Drain Current1
Q1 IDM Q2
Continuous Drain Current
TA = 25 °C TA = 70 °C
Q1 Q2 ID Q1 Q2
Avalanche Current
Q1 IAS
Q2
Avalanche Energy
L = 0.1mH
Q1 EAS
Q2
Power Dissipation
Q1
TC = 25 °C
Q2
PD Q1
TC = 100 °C
Q2
LIMITS 30 30 ±20 ±20 50 58 31 36 81 104 12 15 10 12 22 30 24 45 28 35 11 14
UNITS V
A
mJ W
REV 1.
PK608DY Datasheet
