2N7002W Datasheet PDF | Unisonic Technologies

Unisonic Technologies 2N7002W

The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

Part No.	2N7002W
Datasheet	2N7002W Download
Manufacturer	Unisonic Technologies
Description	N-CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

FEATURES

* High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002WL-AL3-R 2N7002WG-AL3-R Package SOT-323 1 S Pin Assignment 2 3 G D Packing Tape Reel MARKING 3P G: Halogen Free L: Lead Free Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-537.b Free Datasheet 2N7002W Preliminary Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS ≤1MΩ) VDGR 60 V Continuous ±20 Gate Source Voltage VGSS V Non Repetitive(tP<50μs) ±40 Continuous 300 Drain Current ID mA Pulsed 800 Power Dissipation 200 mW PD Derated Above 25°C 1.6 mW/°C Junction Temperature TJ + 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

2N7002W Datasheets by Manufacturer

5 datasheets

Part Number	Manufacturer
2N7002W	Galaxy Century Microelectronics
2N7002W	SeCoS Halbleitertechnologie GmbH
2N7002W	Fairchild Semiconductor
2N7002W	JCET
2N7002W	Weitron Technology