2N70Z Datasheet PDF | Unisonic Technologies

Unisonic Technologies 2N70Z

2N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Part No.	2N70Z
Datasheet	2N70Z Download
Manufacturer	Unisonic Technologies
Description	N-CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

The UTC

FEATURES

* RDS(ON) = 6.3Ω@VGS = 10V * Ultra Low gate charge (typical 8.1nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2N70ZL-TM3-T 2N70ZG-TM3-T TO-251 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS Packing Tube Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-766.B 2N70Z Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) IAR ID IDM 2.0 A 2.0 A 8.0 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 140 mJ 2.8 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation Junction Temperature PD 30 W TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.