Unisonic Technologies 2SB1216
PNP PLANAR TRANSISTOR
APPLICATIONS
●FEATURES
* Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1216L-x-TA3-T 2SB1216G-x-TA3-T TO-220 2SB1216L-x-TF3-T 2SB1216G-x-TF3-T TO-220F Note: Pin assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E Packing Tube Tube
● MARKING Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 4 QW-R225-006.C 2SB1216 PNP PLANAR TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -120 V VCEO -100 V Emitter-Base Voltage VEBO -6 V Collector Current DC Pulse(Note 2) IC -4 A -8 A Collector Dissipation PC 2 W Junction Temperature Storage Temperature TJ +150 C TSTG -40 ~ +150 C Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.