onsemi 2SB1216
The 2SB1216/2SD1816 are classified by 0.5A hFE as follows: Rank S T hFE 140 to 280 200 to 400 Fig.1 Switching Time Test Circuit 2 2SB1216, 2SD1816 3 2SB1216, 2SD1816 4 PACKAGE DIMENSIONS unit : mm IPAK / TP CASE 369AJ ISSUE O 2SB1216, 2SD1816 1 : Base 2 : Collector 3 : Emitter 4 : Collector 5 PACKAGE DIMENSIONS unit : mm DPAK / TP-FA CASE 369AH ISSUE O 2SB1216, 2SD1816 1 : Base 2 : Collector 3 : Emitter 4 : Collector 6 2.5 2.0 7.0 Recommended Soldering Footprint 7.0 1.5 2.3 2.3 2SB1216, 2SD1816 ORDERING INFORMATION Device 2SB1216S-E 2SB1216T-E 2SD1816S-E 2SD1816T-E 2SB1216S-H 2SB1216T-H...| Part No. | 2SB1216 |
|---|---|
| Datasheet | 2SB1216 Download |
| Manufacturer |  onsemi |
| Description | Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● Low Collector to Emitter Saturation Voltage● Small and Slim Package Facilitating Compactness of Sets
● High fT
● Good Linearity of hFE
● Fast Switching Time Typical
APPLICATIONS
● Suitable for Relay Drivers● High Speed Inverters
● Converters
● Other General High Current Switching
APPLICATIONS
ELECTRICAL CONNECTION 2,4 2,4 1 3 2SB1216 1 3 2SD1816 MARKING 1 : Base 2 : Collector 3 : Emitter 4 : Collector SPECIFICATIONS ( ) : 2SB1216 ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Collector to Base Voltage VCBO (−) 120 V Collector to Emitter Voltage VCEO (−) 100 V Emitter to Base Voltage VEBO (−) 6 V Collector Current IC (−) 4 A Collector Current (Pulse) ICP (−) 8 A Collector Dissipation Tc=25°C PC 1 W 20 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
