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4N65L - N-Channel Power MOSFET

Download the 4N65L datasheet PDF. This datasheet also covers the 4N65 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic.

Key Features

  • S.
  • RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2017 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-397.P 4N65 Power MOSFET.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (4N65_UnisonicTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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4N65 Power MOSFET Zibo Seno
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4N65 N-Channel Power MOSFET Unisonic Technologies
4N65 650V N Channel Power MOSFET JINAN JINGHENG
4N65 N-Channel MOSFET PINGWEI

Other Datasheets by Unisonic Technologies

Part Number Description
4N65-ML N-CHANNEL POWER MOSFET
4N65-S N-CHANNEL POWER MOSFET
4N65-TC1 650V N-CHANNEL POWER MOSFET
4N65G N-Channel Power MOSFET
4N60 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 4N65 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-397.