Datasheet Details
| Part number | TTG120N03AT |
|---|---|
| Manufacturer | Unigroup |
| File Size | 421.42 KB |
| Description | 30V N-Channel Trench MOSFET |
| Download | TTG120N03AT Download (PDF) |
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| Part number | TTG120N03AT |
|---|---|
| Manufacturer | Unigroup |
| File Size | 421.42 KB |
| Description | 30V N-Channel Trench MOSFET |
| Download | TTG120N03AT Download (PDF) |
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|
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Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for fast-switching Applications Applications Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS 30V ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 120A < 3.4mΩ < 4.7mΩ 100% UIS Tested DFN5x6 D D D D Device TTG120N03AT G S S S Package DFN5x6 Form Tape&Reel Marking 120N03AT Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current A Avalanche Current A TC = 25ºC TC = 100ºC Single Pulse Avalanche Energy L =0.3mH A Power Dissipation C TC = 25ºC TC = 100ºC Operating Junction and Storage Temperature Range VDS VGS ID IDM IAS EAS PD PD TJ, TSTG Thermal Resistance Parameter Symbol Thermal Resistance, Junction-to-Case Steady-State Thermal Resistance, Junction-to-Ambient Steady-State RƟJC RƟJA V1.0 1 Value Unit 30 V ±20 V 51 A 51 360 A 30 A 135 mJ 127 W 82 W -55 to 175 ºC Value 1.24 100 Unit ºC/W www.tsinghuaicwx.com TTG120N03AT Wuxi Unigroup Microelectronics CO.,LTD.
Electrical Characteristics(TJ =25ºC unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =250µA,VGS =0V IDSS Zero Gate Voltage Drain Current VDS =30V, VGS =0V TJ =25ºC TJ =100ºC IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V VGS(th) Gate Threshold Voltage VDS =VGS, ID =250µA RDS(ON) Static Drain-Source On-Resistance VGS =10V, ID =20A VGS =4.5V, ID =20A gFS Forward Transconductance VDS =10V, ID =20A VSD Diode Forward Voltage IS =30A, VGS =0V IS Maximum Body-Diode Continuous Current B DYNAMIC PARAMETERS 30 ---1 --24.16 --- Ciss Input Capacitance Coss Output Capacitance Crss Reverse Tran
TTG120N03AT Wuxi Unigroup Microelectronics CO.,LTD.
30V N-Channel Trench MOSFET(Preliminary).
| Part Number | Description |
|---|---|
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