Datasheet Details
| Part number | TTG70P04AT |
|---|---|
| Manufacturer | Unigroup |
| File Size | 607.24 KB |
| Description | 40V P-Channel Trench MOSFET |
| Download | TTG70P04AT Download (PDF) |
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| Part number | TTG70P04AT |
|---|---|
| Manufacturer | Unigroup |
| File Size | 607.24 KB |
| Description | 40V P-Channel Trench MOSFET |
| Download | TTG70P04AT Download (PDF) |
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|
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Product Summary Trench Power technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications VDS ID (at VGS =-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V) -40V -70A < 6.5mΩ < 10mΩ Applications Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested DFN5x6 Part Number TTG70P04AT Package Type DNF5*6 Form Tape&Reel Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Maximum Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B TC =25ºC TC =100ºC ID Pulsed Drain Current A IDM Avalanche Current A IAS Single Pulse Avalanche Energy L =0.3mH A EAS Power Dissipation C TC =25ºC PD TC =100ºC Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics - 40 ±20 -51 -51 -210 -57 487 143 71.43 -55 to 175 Parameter Symbol Maximum Maximum Junction-to-Case Maximum Junction-to-Ambient Steady-State Steady-State RƟJC RƟJA 1.05 100 V1.0 1 Marking 70P04AT Units V V A A A mJ W W ºC Units ºC/W www.tsinghuaicwx.com TTG70P04AT Wuxi Unigroup Microelectronics CO.,LTD.
Electrical Characteristics(TJ =25ºC unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =-250µA,VGS =0V -40 IDSS Zero Gate Voltage Drain Current VDS =-40V, VGS =0V TJ =25ºC TJ =100ºC IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V VGS(th) Gate Threshold Voltage VDS =VGS, ID =-250µA -1 RDS(ON) Static Drain-Source On-Resistance VGS =-10V, ID =-30A VGS =-4.5V, ID =-30A gFS Forward Transconductance VDS =-5V, ID =-20A VSD Diode Forward Voltage IS =-30A, VGS =0V IS Maximum Body-Diode Continuous Current B DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING PARAMETERS
TTG70P04AT Wuxi Unigroup Microelectronics CO.,LTD.
40V P-Channel Trench MOSFET(Preliminary).
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