TTG120N03GT
TTG120N03GT is N-Channel Trench MOSFET manufactured by Unigroup.
FEATURES
- Trench Power MOSFET Technology
- Low RDS(ON)
- Low Gate Charge
- Optimized For Fast-switching Applications
APPLICATIONS
- Synchronous Rectification in DC/DC and AC/DC Converters
- Isolated DC/DC Converters in Tele and Industrial
Device Marking and Package Information
Device
Package
TTG120N03AT
DFN5- 6
Marking 120N03AT
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range
(note1)
(note2) (note1)
VDSS ID IDM
VGSS EAS IAs PD TJ, Tstg
Value
30 120 480 ±20 135 30 106 -55~+150
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol
Rth JC Rth JA
Value
1.18 60
Unit V A A V...
