Datasheet Details
| Part number | TTG20P03ATC |
|---|---|
| Manufacturer | Unigroup |
| File Size | 712.39 KB |
| Description | 30V P-Channel Trench MOSFET |
| Download | TTG20P03ATC Download (PDF) |
|
|
| Part number | TTG20P03ATC |
|---|---|
| Manufacturer | Unigroup |
| File Size | 712.39 KB |
| Description | 30V P-Channel Trench MOSFET |
| Download | TTG20P03ATC Download (PDF) |
|
|
|
Product Summary Trench Power technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications Applications Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial VDS ID (at VGS =-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V) -30V -20A < 17mΩ < 30mΩ DFN3.3x3.3 Part Number TTG20P03ATC Package Type DFN3.3x3.3 Form Tape & Reel Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Maximum Drain-Source Voltage Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current A TC =25ºC TC =100ºC Avalanche Current A Single Pulse Avalanche Energy L =0.3mH A Power Dissipation C TC =25ºC TC =100ºC Junction and Storage Temperature Range Thermal Characteristics VDS VGS ID IDM IAS EAS PD TJ, TSTG -30 ±20 -17 -13 -80 22 72.6 11.3 4.5 -55 to 150 Parameter Symbol Maximum Maximum Junction-to-Case Steady-State RƟJC 11 Maximum Junction-to-Ambient Steady-State RƟJA 100 V1.0 1 Marking TTG20P03AT Units V V A A A mJ W W ºC Units ºC/W www.tsinghuaicwx.com TTG20P03ATC Wuxi Unigroup Microelectronics CO.,LTD.
Electrical Characteristics(TJ =25ºC unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =-250µA,VGS =0V -30 IDSS Zero Gate Voltage Drain Current VDS =-30V, VGS =0V TJ =25ºC TJ =125ºC IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V VGS(th) Gate Threshold Voltage VDS =VGS, ID =-250µA -1 RDS(ON) Static Drain-Source On-Resistance VGS =-10V, ID =-20A VGS =-4.5V, ID =-20A gFS Forward Transconductance VDS =-5V, ID =-4A VSD Diode Forward Voltage IS =-10A, VGS =0V IS Maximum Body-Diode Continuous Current B DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance SWITCHING PARAM
TTG20P03ATC Wuxi Unigroup Microelectronics CO.,LTD.
30V P-Channel Trench MOSFET(Preliminary).
| Part Number | Description |
|---|---|
| TTG120N03AT | 30V N-Channel Trench MOSFET |
| TTG120N03GT | N-Channel Trench MOSFET |
| TTG70P04AT | 40V P-Channel Trench MOSFET |
| TTG90N03AT | 30V N-Channel Trench MOSFET |