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TTG20P03ATC Wuxi Unigroup Microelectronics CO.,LTD.
30V P-Channel Trench MOSFET(Preliminary)
General Description
Product Summary
Trench Power technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications
Applications
Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial
VDS ID (at VGS =-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V)
-30V -20A < 17mΩ < 30mΩ
DFN3.3x3.3
Part Number TTG20P03ATC
Package Type DFN3.3x3.3
Form Tape & Reel
Absolute Maximum Ratings (TA =25ºC unless otherwise noted)
Parameter
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current A
TC =25ºC TC =100ºC
Avalanche Current A
Single Pulse Avalanche Energy L =0.