7N60-M Description
The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
7N60-M Key Features
- RDS(ON) = 1.2@ VGS = 10V, ID = 3.7A
- Fast Switching Capability
- Avalanche Energy Tested
- Improved dv/dt Capability, High Ruggedness
- SYMBOL
- ORDERING INFORMATION