7N60-M Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 7N60B ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Volt

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 7N60 ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Sta

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MOSFET – N-Channel, SUPERFET) 600 V, 47 A, 70 mW FCA47N60, FCA47N60-F109 Description SUPERFET MOSFET is onsemi’s first generation of high voltage supe

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MOSFET – N-Channel, SUPERFET) 600 V, 47 A, 70 mW FCA47N60, FCA47N60-F109 Description SUPERFET MOSFET is onsemi’s first generation of high voltage supe

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JCS7N60F /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (n

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KIA7N60U-VB KIA7N60U-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PL

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FMV07N60S1 Super J MOS® S1 series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Feat

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HM7N60BF-VB HM7N60BF-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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TF7N60-VB TF7N60-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC)

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PL

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SSS7N60B-VB SSS7N60B-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 7N60A ·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Volt

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Data Sheet HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D,

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www.DataSheet.co.kr SVD7N60T/SVD7N60F 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N60T/F is an N-channel enhancement mode power MOS field effec

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SM7N60S 600V N-Channel MOSFET TO-220F SM7N60S KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Saf

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SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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SM7N60C 600V N-Channel MOSFET TO-220F SM7N60C KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Saf

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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