7N60-M Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 7N60B ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Volt

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SEMICONDUCTOR 7N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (7A, 600Volts) DESCRIPTION The Nell 7N60 is a three-terminal si

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 7N60 ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Sta

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SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60

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MOSFET – N-Channel, SUPERFET), FRFET) 600 V, 47 A, 73 mW FCH47N60F Description SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

Rating: 1 ★ (8 votes)

SEMICONDUCTOR 7N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (7A, 600Volts) DESCRIPTION The Nell 7N60 is a three-terminal si

Rating: 1 ★ (8 votes)

MOSFET – N-Channel, SUPREMOS) 600 V, 47 A, 62 mW FCH47N60N Description The SUPREMOS MOSFET is ON Semiconductor’s next generation of high voltage super

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TM HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet March 2000 File Number 4827.1 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Di

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FQPF7N60 — N-Channel QFET® MOSFET FQPF7N60 N-Channel QFET® MOSFET 600 V, 4.3 A, 1 Ω Description This N-Channel enhancement mode power MOSFET is produ

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 7N60A ·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Volt

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Silicon N-Channel Power MOSFET CS7N60F A9R ○R General Description： CS7N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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UNISONIC TECHNOLOGIES CO., LTD 7N60A 7A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power fi

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KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 7N60 1.Description The KIA7N60 is a high voltage MOSFET and is designed to have better characteristics, su

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UNISONIC TECHNOLOGIES CO., LTD 7N60-Q 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to

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UNISONIC TECHNOLOGIES CO., LTD 7N60-CB Preliminary 7.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-CB is a high voltage power MOSFET

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MOSFET – N-Channel, 600 V, 47 A, 75 mW FCH47N60F-F085 Description SUPERFET® is ON Semiconductor’s proprietary new generation of high voltage MOSFETs u

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MOSFET – N-Channel, SUPERFET) II 600 V, 47 A, 70 mW FCH47N60 Description SuperFET II MOSFET is ON Semiconductor’s first generation of high voltage sup

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MOSFET – N-Channel, SUPREMOS, FRFET 600 V, 48.5 A, 65 mW FCH47N60NF Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high vol

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SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

Rating: 1 ★ (7 votes)