7N65-M Description
The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
7N65-M Key Features
- RDS(ON) ≤ 1.2 Ω @ VGS = 10V, ID = 3.7A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
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