7N65-M Datasheet | Specifications & PDF Download

7N65(F,B,H) 7A mps,650 Volts N-CHANNEL MOSFET FEATURE  7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A  Low gate charge  Low Ciss  Fast switching  100% aval

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www.DataSheet.co.kr FQP7N65C/FQPF7N65C FQP7N65C/FQPF7N65C 650V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power f

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7N65(F,B,H) 7A mps,650 Volts N-CHANNEL MOSFET FEATURE  7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A  Low gate charge  Low Ciss  Fast switching  100% avala

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MDF7N65B N-channel MOSFET 650V MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35Ω General Description These N-channel MOSFET are produced using advanced Ma

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Silan Microelectronics SVS7N65F/D/MJ_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS7N65F/D/MJ is an N-channel enhan

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SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which

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ITA07N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 1.2Ω ID 7A Features: ●

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Description AP7N65FIP 650V N-Channel Enhancement Mode MOSFET The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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KF7N65F-VB KF7N65F-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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WFF7N65SAH Product Description Silicon N-Channel MOSFET Features • 650V, 7A • RDS(ON) = 0.54Ω (Max.) @ VGS = 10V, ID = 4A • Very low FOM RDS(ON)XQg •

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Description AP7N65FIP 650V N-Channel Enhancement Mode MOSFET The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

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AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary The AOT7N65 & AOTF7N65 have been fabricated using an advanced high v

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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650V N-ch Planar MOSFET General Features  RoHS Compliant  RDS(ON),typ.=1.2 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body

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SDF07N65-VB SDF07N65-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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SWF7N65-VB SWF7N65-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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SAMWIN TO-220F TO-220 SW7N65 N-channel MOSFET BVDSS : 650V ID : 7.0A RDS(ON) : 1.32ohm 1 2 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 1

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MFIRF7N65 MCIRF7N65 ID = 7.0A VDS = 650V RDS(on)MAX = 1.5Ω Major Ratings and Characteristics Characteristics Values Units ID 7.0 A IDM 28.0 A VD

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