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CHA5293A - 17-24GHz High Power Amplifier

Datasheet Summary

Description

The CHA5293a is a high gain three-stage monolithic high power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounds.

Features

  • Performances : 17-24GHz.
  • 30dBm output power @ 1dB comp. gain.
  • 17 dB ± 1dB gain.
  • DC power consumption, 800mA @ 6V.
  • Chip size : 4.01 x 2.52 x 0.05 mm Gain & RLoss (dB) 25 20 15 10 5 0 -5 -10 -15 -20 12 Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain P1dB Output power at 1dB gain compression Id Bias current S22 S11 14 16 18 20 22 24 26 2.

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Datasheet Details

Part number CHA5293A
Manufacturer United Monolithic Semiconductors
File Size 147.44 KB
Description 17-24GHz High Power Amplifier
Datasheet download datasheet CHA5293A Datasheet
Additional preview pages of the CHA5293A datasheet.

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Full PDF Text Transcription

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CHA5293a 17-24GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5293a is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd1 Vd2 Vg3 Vd3 Vg1,2 Vd2 Vg3 Vd3 Main Features ■ Performances : 17-24GHz ■ 30dBm output power @ 1dB comp. gain ■ 17 dB ± 1dB gain ■ DC power consumption, 800mA @ 6V ■ Chip size : 4.01 x 2.52 x 0.
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