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CHA5296 Datasheet 27-30ghz High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA5296 27-30GHz High Power Amplifier GaAs Monolithic Microwave.

General Description

The CHA5296 is a high gain three-stage monolithic high power amplifier.

It is designed for a wide range of applications, from military to mercial munication systems.

The backside of the chip is both RF and DC grounds.

Key Features

  • Performances : 27-30GHz.
  • 29dBm output power @ 1dB comp. gain.
  • 15 dB ± 1dB gain.
  • DC power consumption, 850mA @ 6V.
  • Chip size : 3.80 x 2.52 x 0.05 mm Gain & RLosses (dB) 20 15 10 5 0 S22 -5 -10 -15 S11 -20 20 22 24 26 28 30 32 34 36 Frequency (GHz) Typical on jig Measurements Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain P1dB Output power at 1dB.

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