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CHA5296 - 27-30GHz High Power Amplifier

Datasheet Summary

Description

The CHA5296 is a high gain three-stage monolithic high power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounds.

Features

  • Performances : 27-30GHz.
  • 29dBm output power @ 1dB comp. gain.
  • 15 dB ± 1dB gain.
  • DC power consumption, 850mA @ 6V.
  • Chip size : 3.80 x 2.52 x 0.05 mm Gain & RLosses (dB) 20 15 10 5 0 S22 -5 -10 -15 S11 -20 20 22 24 26 28 30 32 34 36 Frequency (GHz) Typical on jig Measurements Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain P1dB Output power at 1dB.

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Datasheet Details

Part number CHA5296
Manufacturer United Monolithic Semiconductors
File Size 178.58 KB
Description 27-30GHz High Power Amplifier
Datasheet download datasheet CHA5296 Datasheet
Additional preview pages of the CHA5296 datasheet.

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Full PDF Text Transcription

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CHA5296 27-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5296 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process on 50µm substrate thickness, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Performances : 27-30GHz ■ 29dBm output power @ 1dB comp. gain ■ 15 dB ± 1dB gain ■ DC power consumption, 850mA @ 6V ■ Chip size : 3.80 x 2.52 x 0.
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