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CHA5295 Datasheet 24.5-26.5ghz High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA5295 24.5-26.5GHz High Power Amplifier GaAs Monolithic Microwave.

General Description

The CHA5295 is a high gain three-stage monolithic high power amplifier.

It is designed for a wide range of applications, from military to mercial munication systems.

The backside of the chip is both RF and DC grounds.

Key Features

  • Performances : 24.5-26.5GHz.
  • 30dBm output power @ 1dB comp.
  • 17 dB ± 1dB gain.
  • DC power consumption, 800mA @ 6V.
  • Chip size : 4.01 x 2.52 x 0.05 mm 32 30 28 26 24 22 20 18 16 14 12 10 24 P-1dB (dBm) Linear Gain (dB) PAE (%) 24,5 25 25,5 26 Frequency (GHz) Typical on jig Measurements 26,5 Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal.

CHA5295 Distributor