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CHA5295 - 24.5-26.5GHz High Power Amplifier

Datasheet Summary

Description

The CHA5295 is a high gain three-stage monolithic high power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounds.

Features

  • Performances : 24.5-26.5GHz.
  • 30dBm output power @ 1dB comp.
  • 17 dB ± 1dB gain.
  • DC power consumption, 800mA @ 6V.
  • Chip size : 4.01 x 2.52 x 0.05 mm 32 30 28 26 24 22 20 18 16 14 12 10 24 P-1dB (dBm) Linear Gain (dB) PAE (%) 24,5 25 25,5 26 Frequency (GHz) Typical on jig Measurements 26,5 Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal.

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Datasheet Details

Part number CHA5295
Manufacturer United Monolithic Semiconductors
File Size 153.49 KB
Description 24.5-26.5GHz High Power Amplifier
Datasheet download datasheet CHA5295 Datasheet
Additional preview pages of the CHA5295 datasheet.

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Full PDF Text Transcription

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CHA5295 24.5-26.5GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5295 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd1 Vd2 Vg1 Vg2 Vd2 Vg3 Vd3 Vg3 Vd3 Main Features ■ Performances : 24.5-26.5GHz ■ 30dBm output power @ 1dB comp. ■ 17 dB ± 1dB gain ■ DC power consumption, 800mA @ 6V ■ Chip size : 4.01 x 2.52 x 0.
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