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CHA5297 - 37-40GHz High Power Amplifier

Datasheet Summary

Description

The CHA5297 is a three-stage monolithic high power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounds.

Features

  • Performances : 37-40GHz.
  • 28dBm output power @ 1dB comp. gain.
  • 10 dB ± 1dB gain.
  • DC power consumption, 1.6A @ 3.5V.
  • Chip size : 4.16 x 2.6 x 0.05 mm Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain P1dB Output power at 1dB gain compression Id Bias current Min Typ Max Unit 37 40 GHz 10 dB 28 dBm 1.6 A ESD Protection : Electrostatic discha.

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Datasheet Details

Part number CHA5297
Manufacturer United Monolithic Semiconductors
File Size 101.87 KB
Description 37-40GHz High Power Amplifier
Datasheet download datasheet CHA5297 Datasheet
Additional preview pages of the CHA5297 datasheet.

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Full PDF Text Transcription

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CHA5297 37-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5297 is a three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd1 Vd2 Vg3 Vd3 IN OUT Vg1 Vg2 Vd2 Vg3 Vd3 Main Features ■ Performances : 37-40GHz ■ 28dBm output power @ 1dB comp. gain ■ 10 dB ± 1dB gain ■ DC power consumption, 1.6A @ 3.5V ■ Chip size : 4.16 x 2.6 x 0.05 mm Main Characteristics Tamb.
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