CHA6710-99F
CHA6710-99F is 5W X Band Medium Power Amplifier manufactured by United Monolithic Semiconductors.
Description
V+
The CHA6710-99F is a two stage Medium
Power Amplifier operating between 8 and
12.75GHz. It typically provides 5W of saturated output power and 36% of power added efficiency.
In
Out
It is designed for a wide range of
STG1 STG2 applications, from military to mercial munication systems.
The circuit is manufactured with a Ga N p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
V-
It is available in chip form.
Main Features
- Frequency range: 8-12.75GHz
- High output power: 5.5W
- High PAE: 36%
- Linear Gain: 23.5d B
- DC bias: Vd=25Volt @ Idq=0.2A
- Chip size 2.7x2.15x0.1mm
- Available in bare die
Main Electrical Characteristics
Tamb.= +25°C, Vd = +25V, Idq = 200m A, Pulse width=25µs, Duty cycle =10%
Symbol
Parameter
Min Typ Max
Freq Frequency range
Gain Linear Gain
Pout Output Power
PAE Associated Power Added Efficiency
Unit GHz d B
W %
Ref. : DSCHA67100301- 27 Oct 20
1/26
Specifications subject to change without notice
United Monolithic Semiconductors...
