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CHA6710-99F - 5W X Band Medium Power Amplifier

General Description

12.75GHz.

added efficiency.

Key Features

  • Frequency range: 8-12.75GHz.
  • High output power: 5.5W.
  • High PAE: 36%.
  • Linear Gain: 23.5dB.
  • DC bias: Vd=25Volt @ Idq=0.2A.
  • Chip size 2.7x2.15x0.1mm.
  • Available in bare die Main Electrical Characteristics Tamb. = +25°C, Vd = +25V, Idq = 200mA, Pulse width=25µs, Duty cycle =10% Symbol Parameter Min Typ Max Freq Frequency range 8 12.75 Gain Linear Gain 23.5 Pout Output Power 5.5 PAE Associated Power Added Efficiency 36 Unit GHz dB W % Ref. : DSCHA6710.

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Datasheet Details

Part number CHA6710-99F
Manufacturer United Monolithic Semiconductors
File Size 1.71 MB
Description 5W X Band Medium Power Amplifier
Datasheet download datasheet CHA6710-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA6710-99F 5W X Band Medium Power Amplifier GaN Monolithic Microwave IC Description V+ The CHA6710-99F is a two stage Medium Power Amplifier operating between 8 and 12.75GHz. It typically provides 5W of saturated output power and 36% of power added efficiency. In Out It is designed for a wide range of STG1 STG2 applications, from military to commercial communication systems. The circuit is manufactured with a GaN pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. V- It is available in chip form. Main Features ■ Frequency range: 8-12.75GHz ■ High output power: 5.5W ■ High PAE: 36% ■ Linear Gain: 23.5dB ■ DC bias: Vd=25Volt @ Idq=0.2A ■ Chip size 2.7x2.15x0.