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CHS5104-FAB - Reflective SPDT

General Description

The CHS5104-FAB is a monolithic FET based reflective switch housed in leadless surface mount hermetic metal ceramic 6x6mm² package.

It is designed for a wide range of applications, from space and military to commercial communication systems.

Key Features

  • Broadband performance: DC-6GHz.
  • Low insertion loss: 0.6dB @2GHz 1.0dB @4GHz 1.3dB @6GHz.
  • Isolation: 30dB @4GHz.
  • Input P1dB: 30dBm Main Electrical Characteristics Tamb. = +25°C Vh=0V/VL=-5V Symbol Parameter Freq Frequency range IL On state insertion loss ISOL Off state isolation RL On state return loss IP1dB Input Power @1dB gain compression Min Typ Max Unit DC 6 GHz 1.3 dB 30 dB 10 dB 30 dBm Ref. : DSCHS5104-FAB0301 - 27 Oct 20 1/16 Specifications subj.

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Datasheet Details

Part number CHS5104-FAB
Manufacturer United Monolithic Semiconductors
File Size 929.05 KB
Description Reflective SPDT
Datasheet download datasheet CHS5104-FAB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHS5104-FAB DC-6GHz Reflective SPDT GaAs Monolithic Microwave IC in SMD leadless package Description The CHS5104-FAB is a monolithic FET based reflective switch housed in leadless surface mount hermetic metal ceramic 6x6mm² package. It is designed for a wide range of applications, from space and military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length. It is supplied in RoHS compliant SMD package. Main Features ■ Broadband performance: DC-6GHz ■ Low insertion loss: 0.6dB @2GHz 1.0dB @4GHz 1.3dB @6GHz ■ Isolation: 30dB @4GHz ■ Input P1dB: 30dBm Main Electrical Characteristics Tamb.