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CHS5104-QAG - Reflective SPDT

Datasheet Summary

Description

The CHS5104-QAG is a monolithic FET based reflective switch.

It is designed for a wide range of applications, from military to commercial systems.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Features

  • Broadband performance: DC-4GHz.
  • Low insertion loss: 0.7dB.
  • Isolation: 40dB.
  • Return loss: 16dB.
  • Input P1dB: 30dBm.
  • QAG-QFN3x3.
  • MSL1 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range IL On state insertion loss ISOL Off state isolation RL On state return loss IP1dB Input Power @1dB gain compression Min Typ Max Unit DC 4 GHz 0.7 dB 40 dB 16 dB 30 dBm Ref. : DSCHS5104-QAG0301 - 27 Oct 20 1/12 Specifications s.

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Datasheet Details

Part number CHS5104-QAG
Manufacturer United Monolithic Semiconductors
File Size 800.21 KB
Description Reflective SPDT
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CHS5104-QAG DC-4GHz Reflective SPDT GaAs Monolithic Microwave IC in SMD leadless package Description The CHS5104-QAG is a monolithic FET based reflective switch. It is designed for a wide range of applications, from military to commercial systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. Main Features ■ Broadband performance: DC-4GHz ■ Low insertion loss: 0.7dB ■ Isolation: 40dB ■ Return loss: 16dB ■ Input P1dB: 30dBm ■ QAG-QFN3x3 ■ MSL1 Main Electrical Characteristics Tamb.
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