Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
Features
- w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge
w Low intrinsic capacitance
w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
. Part Number UF3C065080B3
Package D2PAK-3L
Marking UF3C065080B3
Typical.
UF3C065080B3 Datasheet
