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UF3C065080B3 Datasheet MOSFET

Manufacturer: UnitedSiC

Overview: DATASHEET UF3C065080B3 TAB 2 13 G (1) TAB D (2) S (3) 650V-80mW SiC FET Rev.

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.

Available in the D2PAK-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with remended RC-snubbers, and any application requiring standard gate drive.

Key Features

  • w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) . Part Number UF3C065080B3 Package D2PAK-3L Marking UF3C065080B3 Typical.

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UF3C065080B3 Distributor