UF3C120040K4S Datasheet | UnitedSiC

1200V-35mW SiC Cascode CASE CASE D (1) Rev. A, January 2019 Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. Features 1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 35mW w Maximum operating temperature of 175°C w Excellent...