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UF3C120150B7S - 1200V SiC Cascode

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • w On-resistance RDS(on): 150mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 67nC w Low body diode VFSD: 1.46V w Low gate charge: QG = 25.7nC w Threshold voltage VG(th): 4.4V (typ) allowing 0 to 15V drive w Package creepage and clearance distance > 6.1mm w Kelvin source pin for optimized switching performance w ESD protected, HBM class 2 Typical.

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Datasheet Details

Part number UF3C120150B7S
Manufacturer UnitedSiC
File Size 851.38 KB
Description 1200V SiC Cascode
Datasheet download datasheet UF3C120150B7S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UF3C120150B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 150 mohm Rev. C, Jan 2025 Description 1 7 Tab G (1) KS (2) D (Tab) S (3-7) Part Number UF3C120150B7S Package D2PAK-7L Marking UF3C120150B7S This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.