UJ3N120035K3S Overview
United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
UJ3N120035K3S Applications
- EliteSiC, Power N-Channel, TO-247-3L, 1200 V, 35 mohm | UJ3N120035K3S