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MIE-11RA2 - GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-11RA2 is a GaAs infrared emitting diode molded in red , lensed side looking package .

The MIE-11RA2 provides a broad range of intensity selection .

Key Features

  • l 1.0 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 Selected to specific on-line intensity and radiant intensity ranges C A l Low cost, plastic side looking package Mechanically and spectrally matched to the MID-11422 of phototransistor . NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. l Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak.

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Datasheet Details

Part number MIE-11RA2
Manufacturer Unity Opto Technology
File Size 29.21 KB
Description GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-11RA2 Datasheet

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GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-11RA2 is a GaAs infrared emitting diode molded in red , lensed side looking package . The MIE-11RA2 provides a broad range of intensity selection . 5.72±0.2 (.225±.008) MIE-11RA2 Unit: mm ( inches ) Package Dimensions 4.45±0.20 (.175±.008) 2.22 (.087) (.087) 1.22±0.10 (.048±.004) 1.55±0.02 (.061±.008) 0.76±0.10 (.030±.008) 12.7 MIN. (.500) CATHODE 0.5 TYP. (.020) Features l 1.0 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 Selected to specific on-line intensity and radiant intensity ranges C A l Low cost, plastic side looking package Mechanically and spectrally matched to the MID-11422 of phototransistor . NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.