BUK655-500B - N-Channel 600-V Power MOSFET

VBsemi

Key Features

Low gate charge Qg results in simple drive requirement Available.
Improved gate, avalanche and dynamic dV/dt ruggedness.
Fully characterized capacitance and avalanche voltage and current TO-220AB S D G D G S N-Channel MOSFET.

BUK655-500B n-channel 600-v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	BUK655-500B
Manufacturer	VBsemi
File Size	289.27 KB
Description	N-Channel 600-V Power MOSFET
Datasheet	BUK655-500B Datasheet

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Full PDF Text Transcription (Reference)

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BUK655-500B-VB BUK655-500B-VB Datasheet /$IBOOFM07 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 49 13 20 Single 0.