BUK655-500B Datasheet | VBsemi

FEATURES - Low gate charge Qg results in simple drive requirement Available - Improved gate, avalanche and dynamic d V/dt ruggedness - Fully characterized capacitance and avalanche voltage and current TO-220AB S N-Channel MOSFET APPLICATIONS - Switch mode power supply (SMPS) - Uninterruptible power supply - High speed power switching APPLICABLE OFF LINE SMPS TOPOLOGIES - Active clamped forward - Main switch ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery d V/dt c TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 6.8 m H, Rg = 25 , IAS = 9.2 A (see fig. 12). c. ISD  9.2 A, d I/dt  50 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 600 ± 30 8.0 5.8 37 1.3 290 8.0 17 170 5.0 -55 to +150 300 10 1.1 UNIT V W/°C m J A m J W V/ns °C...