F650B Description
F650B-VB Datasheet N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) (:) 0.058at VGS = 10 V ID (A).
F650B Key Features
- TrenchFET® Power MOSFETS
- 175 °C Junction Temperature
- New Low Thermal Resistance Package
- pliant to RoHS Directive 2002/95/EC