VBsemi Electronics F650B
N-Channel MOSFET
| Part No. | F650B |
|---|---|
| Datasheet | F650B Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFETS● 175 °C Junction Temperature
● New Low Thermal Resistance Package
● Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT TO-220AB
APPLICATIONS
● Industrial D GD S G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Repetitive Avalanche Energya IAR L = 0.1 mH EAR Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 200 ± 20 35 23 70 35 61 300b 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 40 0.5 QMMJSRRJ T Unit V A mJ W °C Unit °C/W N F650B-VB SPECIFICATIONS (TJ = 25 °C, unless oth...
