HY5110W Description
HY5110W-VB HY5110W-VB Datasheet N-Channel 100 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration 100 0.002 320 Single TO-247AC S D G Top View.
HY5110W Key Features
- Trench Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested