VBE17R04 Datasheet | VBsemi

FEATURES - Low Gate Charge Qg Results in Simple Drive Requirement - Improved Gate, Avalanche and Dynamic d V/dt Ruggedness Available Ro HS- PLIANT - Fully Characterized Capacitance and Avalanche Voltage and Current - pliant to Ro HS directive 2002/95/EC TO-252 GDS Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 24 m H, RG = 25 Ω, IAS = 3.2 A (see fig. 12). c. ISD ≤ 3.2 A, d I/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Drain current limited by maximum junction temperature. LIMIT 700 ± 30 4.5 4.2 18 0.48 325 4 6 60 2.8 - 55 to + 150 300 10 1.1 UNIT V W/°C m J A m J W V/ns °C lbf - in N- m .VBsemi. THERMAL RESISTANCE RATINGS PARAMETER...