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VBFB165R02S - N-Channel MOSFET

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription for VBFB165R02S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VBFB165R02S. For precise diagrams, tables, and layout, please refer to the original PDF.

VBM165R02S / VBMB165R02S VBE165R02S / VBFB165R02S www.VBsemi.com /$IBOOFM657 %4 4VQFS+VODUJPO...

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Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 650 VGS = 10 V 2.3 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.