Datasheet4U Logo Datasheet4U.com

VBFB16R07S - N-Channel MOSFET

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

📥 Download Datasheet

More Datasheets from VBsemi

Part Number Description
VBFB16R02S N-Channel MOSFET
VBFB165R02S N-Channel MOSFET
VBFB1104N N-Channel MOSFET
VBFB1206N N-Channel MOSFET
VBFB1252M N-Channel MOSFET
VBFB13R05 Power MOSFET
VBFB14R02 Power MOSFET
VBFB14R04 Power MOSFET
VBFB2102M P-Channel 100V MOSFET
VBFB2201K P-Channel MOSFET

Full PDF Text Transcription for VBFB16R07S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VBFB16R07S. For precise diagrams, tables, and layout, please refer to the original PDF.

VBM16R07S / VBMB16R07S VBE16R07S / VBFB16R07S www.VBsemi.com /$IBOOFM07 %4 4VQFS+VODUJPOPowe...

View more extracted text
r MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 00 VGS = 10 V    Single 0.