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VBFB2201K - P-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % UIS Tested.

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Datasheet Details

Part number VBFB2201K
Manufacturer VBsemi
File Size 222.34 KB
Description P-Channel MOSFET
Datasheet download datasheet VBFB2201K Datasheet

Full PDF Text Transcription for VBFB2201K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VBFB2201K. For precise diagrams, and layout, please refer to the original PDF.

VBFB2201K P-Channel 200-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 200 1.000 at V GS = - 10 V 1.200 at V GS = - 4.5 V TO-251 ID (A)a -5 - 4.8 Qg ...

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0 at V GS = - 10 V 1.200 at V GS = - 4.5 V TO-251 ID (A)a -5 - 4.8 Qg (Typ.) 76 nC FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.

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