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VBFB2610N - P-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % UIS Tested.

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Datasheet Details

Part number VBFB2610N
Manufacturer VBsemi
File Size 220.13 KB
Description P-Channel MOSFET
Datasheet download datasheet VBFB2610N Datasheet

Full PDF Text Transcription for VBFB2610N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VBFB2610N. For precise diagrams, and layout, please refer to the original PDF.

VBFB2610N P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.066 at VGS = - 10 V 0.080 at VGS = - 4.5 V TO-251 ID (A)a - 20 - 18 Qg (Ty...

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at VGS = - 10 V 0.080 at VGS = - 4.5 V TO-251 ID (A)a - 20 - 18 Qg (Typ.) 40 nC FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.

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