VBFB2610N Description
VBFB2610N P-Channel 60-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.066 at VGS = - 10 V 0.080 at VGS = - 4.5 V TO-251 ID (A)a - 20 - 18 Qg (Typ.) 40.
VBFB2610N Key Features
- TrenchFET® Power MOSFET
- 100 % UIS Tested