VBZE20N06
VBZE20N06 is N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Power MOSFET
- 175 °C Junction Temperature
Available
Ro HS-
PLIANT
TO-252
GDS Top View
Drain Connected to Tab
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
± 20
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
46 28
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Avalanche Energy (Duty Cycle ≤ 1 %)
L = 0.1 m H
20 m J
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
100...
