VBZE20N06 Description
VBZE20N06 N-Channel 6 0-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.023 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 45.
VBZE20N06 Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
VBZE20N06 is N-Channel MOSFET manufactured by VBsemi.
| Part Number | Description |
|---|---|
| VBZE20N10 | N-Channel MOSFET |
| VBZE20N20 | N-Channel MOSFET |
| VBZE10N65S | N-Channel Power MOSFET |
| VBZE30N10 | N-Channel MOSFET |
| VBZE4N60 | N-Channel MOSFET |
VBZE20N06 N-Channel 6 0-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.023 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 45.