VBZE20N10 Description
VBZE20N10 N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () 100 0.110 at VGS = 10 V ID (A) 15 TO-252 D.
VBZE20N10 Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC