VBZE20N10
VBZE20N10 is N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to Ro HS Directive 2002/95/EC
APPLICATIONS
- Primary Side Switch
GD S
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 125 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 m H
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 100 ± 20 15 13 60 10 10 18 96b 30a
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. t 10 s Steady...
