VBZE30N10 Description
VBZE30N10 N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V ID (A).
VBZE30N10 Key Features
- TrenchFET® Power MOSFETS
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- Part: VBZE30N10
- Manufacturer: VBsemi
- Size: 258.41 KB
Related VBsemi Datasheets
| Part Number | Description |
|---|---|
| VBZE10N65S | N-Channel Power MOSFET |
| VBZE20N06 | N-Channel MOSFET |
| VBZE20N10 | N-Channel MOSFET |
| VBZE20N20 | N-Channel MOSFET |
| VBZE4N60 | N-Channel MOSFET |