VBZE30N10 Overview
VBZE30N10 N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V ID (A).
VBZE30N10 Key Features
- TrenchFET® Power MOSFETS
- 175 °C Junction Temperature
- Low Thermal Resistance Package
VBZE30N10 Datasheet Details
| Part number | VBZE30N10 |
|---|---|
| Datasheet | VBZE30N10-VBsemi.pdf |
| File Size | 258.41 KB |
| Manufacturer | VBsemi |
| Description | N-Channel MOSFET |
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