VBZE30N10
VBZE30N10 is N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Power MOSFETS
- 175 °C Junction Temperature
- Low Thermal Resistance Package
Available
Ro HS-
PLIANT
D TO-252
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
Pulsed Drain Current
Avalanche Current Repetitive Avalanche Energya
L = 0.1 m H
Maximum Power Dissipationa
TC = 25 °C
TC = 75 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material).
(PCB Mount)c
- Pb containing terminations are not Ro HS pliant, exemptions may apply.
Symbol Rth JA Rth...
