VBsemi Electronics VBZE4N60
N-Channel MOSFET
| Part No. | VBZE4N60 |
|---|---|
| Datasheet | VBZE4N60 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Ultra Low Gate Charge● Reduced Gate Drive Requirement
● Enhanced 30 V, VGS Rating
● Reduced Ciss, Coss, Crss
● Extremely High Frequency Operation
● Repetitive Avalanche Rated
● Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-252 GDS Top View D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 , IAS = 6.2 A (see fig.
