VBZE4N60 Datasheet | VBsemi

FEATURES - Ultra Low Gate Charge - Reduced Gate Drive Requirement - Enhanced 30 V, VGS Rating - Reduced Ciss, Coss, Crss - Extremely High Frequency Operation - Repetitive Avalanche Rated - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT TO-252 GDS Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 25 m H, Rg = 25 , IAS = 6.2 A (see fig. 12). c. ISD  6.2 A, d I/dt  80 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply LIMIT 600 ± 30 4 2.9 25 1.0 530 6.2 13 125 3.0 - 55 to + 150 300d 10 1.1 UNIT V A W/°C m J A m J W V/ns °C...