VBZE50P06
VBZE50P06 is P-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Power MOSFET
- Material categorization:
APPLICATIONS
- Load Switch
.VBsemi.
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
- 60
± 20
Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
- 50
- 40
- 160
Avalanche Current
- 50
Single Pulse Avalanche Energya
L = 0.1 m H
125 m J
Power Dissipation
TC = 25 °C TC = 75 °C
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