VBZE5N20 Description
VBZE5N20 N-Channel 200 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 13 0.81 3.0 7.9 Single.
VBZE5N20 Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC