VBZE5N20 Datasheet | VBsemi

FEATURES - Trench FET® Power MOSFET - 175 °C Junction Temperature - PWM Optimized - 100 % Rg Tested - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Primary Side Switch DPAK (TO-252) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor (PCB Mount) e Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Maximum Power Dissipation (PCB mount) e Peak Diode Recovery d V/dt c TC = 25 °C TA = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 14 m H, Rg = 25 , IAS = 4.8 A (see fig. 12). c. ISD  5.2 A, d I/dt  95 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 200 ± 20 4.0 3.0 20 0.33 0.020 161 4.0 4.0 40 25 5.0 -55 to +150 260 UNIT V W/°C m J A m J W V/ns °C .VBsemi. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL...