VPT 2N3771
NPN High Power Silicon Transistor
| Part No. | 2N3771 |
|---|---|
| Datasheet | 2N3771 Download |
| Manufacturer |  VPT |
| Description | NPN High Power Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, JANTXV per MIL-PRF-19500/413● TO-3 (TO-204AA) Package
● Designed for High Speed Switching and Amplifier
APPLICATIONS
Rev. V1ELECTRICAL CHARACTERISTICS
(TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Base Breakdown Voltage IC = 200 mA dc, 2N3771 IC = 200 mA dc, 2N3772 V(BR)CEO V dc 40 60 — Collector - Emitter Breakdown Voltage IC = 200 mA dc; RBE = 100Ω, 2N3771 IC = 200 mA dc; RBE = 100Ω, 2N3772 V(BR)CER V dc 45 70 — Collector - Emitter Breakdown Voltage IC = 200 mA dc; VBE = -1.5 V dc, 2N3771 IC = 200 mA dc; VBE = -1.5 V dc, 2N3772 V(BR)CEX V dc 50 90 — Collector - Emitter Cutoff Current VCE = 30 V dc, 2N3771 VCE = 50 V dc, 2N3772 ICEO mA dc — 5 5 Emitter - Base Cutoff Current Collector - Emitter Cutoff Current VEB = 7.0 V dc VBE = 1.5 V dc VCE = 50 V dc, 2N3771 VCE = 100 V dc, 2N3772 IEBO mA dc — 2.0 ICEX1 µA dc — 20 20 Forward-Current Transfer Ratio Forward-Current Transfer Ratio IC = 1.0 A dc; VCE...
