2N3771
2N3771 is NPN High Power Silicon Transistor manufactured by VPT Components.
2N3771 & 2N3772
NPN High Power Silicon Transistor
Features
- Available in JAN, JANTX, JANTXV per MIL-PRF-19500/413
- TO-3 (TO-204AA) Package
- Designed for High Speed Switching and Amplifier Applications
Rev. V1
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector
- Base Breakdown Voltage
IC = 200 mA dc, 2N3771 IC = 200 mA dc, 2N3772
V(BR)CEO V dc
40 60
- Collector
- Emitter Breakdown Voltage
IC = 200 mA dc; RBE = 100Ω, 2N3771 IC = 200 mA dc; RBE = 100Ω, 2N3772
V(BR)CER V dc
45 70
- Collector
- Emitter Breakdown Voltage
IC = 200 mA dc; VBE = -1.5 V dc, 2N3771 IC = 200 mA dc; VBE = -1.5 V dc,...
