VSP008C03MD Datasheet | Vanguard Semiconductor

Features - N+P Channel - Enhancement mode - Very low on-resistance - Fast Switching - Pb-free lead plating; Ro HS pliant 30V N+P Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID 30 -30 V 6.5 13 mΩ 10 24 mΩ 45 -35 A PDFN5x6 Part ID VSP008C03MD Package Type PDFN5x6 Marking 008C03MD Tape and reel information 3000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating NMOS PMOS V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=±10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C 30 45 45 29 180 25 -30 -35 -35 -22 -140 36 PD Maximum power dissipation TC =25°C VGS Gate-Source voltage ±20 ±20 TSTG TJ Storage and operating temperature range Thermal Characteristics -55 to 150 -55 to 150 Symbol Parameter...