VSP008N10MS Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Vito MOS® Ⅱ Technology - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 100V/85A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 100 V 6 mΩ 10 mΩ 85 A PDFN5x6 Part ID VSP008N10MS Package Type PDFN5x6 Marking 008N10M Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM IDSM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C PD Maximum power dissipation PDSM Maximum power dissipation③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics TC...