BUF642 Datasheet | Vishay

Features D Simple-s Witch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 k Hz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 550 900 9 6 10 3 6 70 150 - 65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Junction ambient Test Conditions Symbol Rth JC Rth JA Value 1.78 85 Unit K/W K/W Document Number 86511 Rev. 2, 20- Jan- 99 .vishay.de - Fax Back +1-408-970-5600 1 (8) Vishay Telefunken Electrical Characteristics Tcase = 25°C, unless otherwise specified Test Conditions VCES = 900 V VCES = 900 V; Tcase = 150° C VCEO = 400 V Collector-emitter IC = 500 m A; L = 125 m H; breakdown voltage (figure 1) Imeasure = 100 m A Emitter-base breakdown voltage IE = 1 m A Collector-emitter IC = 1 A; IB = 0.25 A saturation voltage IC = 3 A; IB = 1 A Base-emitter saturation voltage g IC = 1 A; IB = 0.25 A IC = 3 A; IB = 1 A DC forward current transfer ratio VCE = 2 V; IC = 10 m A VCE = 2 V; IC = 1 A VCE = 2 V; IC = 3 A VCE = 2 V; IC = 6 A Collector-emitter working voltage VS = 50 V; L = 1 m H; IC = 2.5 A; IB1 = 0.5 A; - IB2 = 0.5 A; - VBE(off) = 5 V Parameter Collector cut-off current Symbol ICES ICES ICEO V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat h FE h FE h FE h FE VCEW Min Typ Max 50 200 100 Unit m A m A m A V V V V V V 400 9 0.5 1 1 1.5 15 15 8 4 550 .vishay.de - Fax Back +1-408-970-5600 2 (8) Document Number 86511 Rev. 2, 20- Jan-...