BUF644 Datasheet | Vishay

Features D Simple-s Witch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 k Hz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 9 8 12 4 6 70 150 - 65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol Rth JC Value 1.78 Unit K/W Document Number 86512 Rev. 2, 20- Jan- 99 .vishay.de - Fax Back +1-408-970-5600 1 (9) Vishay Telefunken Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 700 V VCE = 700 V; Tcase = 150° C IC = 500 m A; L = 125 m H; Imeasure = 100 m A IE = 1 m A Symbol ICES ICES V(BR)CEO V(BR)EBO Min Typ Max 50 0.5 Unit m A m A V V 0.1 0.2 0.9 1 18 18 0.2 0.4 1 1.2 V V V V 400 9 Collector-emitter working voltage Dynamic y saturation voltage g IC = 1.3 A; IB = 0.3 A VCEsat IC = 4 A; IB = 1.3 A VCEsat IC = 1.3 A; IB = 0.3 A VBEsat IC = 4 A; IB = 1.3 A VBEsat VCE = 2 V; IC = 10 m A h FE VCE = 2 V; IC = 1.3 A h FE VCE = 2 V; IC = 4 A h FE VCE = 5 V; IC = 8 A h FE VS = 50 V; L = 1 m H; IC = 8 A; VCEW IB1 = 2.7 A; - IB2 = 0.8 A; - VBB = 5 V IC = 4 A; IB = 0.8 A; t = 1 m s VCEsatdyn IC = 4 A; IB = 0.8 A; t = 3 m s VCEsatdyn 15 12 6 4 500 V 7.5 1.5 15 4 V...