BUF7216 Datasheet | Vishay

Features D D D D D D D D D Simple-s Witch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 k Hz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage Applications Electronic lamp ballast circuits Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCEO VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 800 1600 11 2 3 1 1.5 80 150 - 65 to +150 Unit V V V A A A A W °C °C Tcase ≤ 25°C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol Rth JC Value 1.56 Unit K/W Document Number 86520 Rev. 1, 20- Jan- 99 .vishay.de - Fax Back +1-408-970-5600 1 (8) Vishay Telefunken Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Test Conditions VCES = 1600 V VCES = 1600 V; Tcase = 125°C VCBO = 1600 V VCBO = 1600 V; Tcase = 125°C Collector-emitter IC = 300 m A; L = 125 m H; breakdown voltage (figure 1) Imeasure = 100 m A Emitter cut-off current VEB = 11 V Collector-emitter IC = 0.35 A; IB = 85 m A saturation voltage IC = 1 A; IB = 0.35 A Base-emitter saturation voltage g IC = 0.35 A; IB = 85 m A IC = 1 A; IB = 0.35 A DC forward current transfer ratio VCE = 2 V; IC = 10 m A VCE = 2 V; IC = 0.4 A VCE = 2 V; IC = 1 A VCE = 5 V; IC = 2 A Dynamic saturation voltage IC = 1 A; IB = 0.35 A; t = 1 ms y g IC = 1 A; IB = 0.35 A; t = 3 ms Symbol ICES ICES ICBO ICBO V(BR)CEO IEBO VCEsat VCEsat VBEsat VBEsat h FE h FE h FE h FE VCEsatdyn VCEsatdyn Min Typ Max 100 1 100 1 Unit m A m A m A m A V m A V V V V 800 1 0.6 1.2 1 1.1 15 15 7 4 10 7 15 10 V V .vishay.de - Fax Back +1-408-970-5600 2 (8) Document Number 86520 Rev. 1, 20- Jan- 99 Vishay...