SI1470DH Datasheet | Vishay

FEATURES - Trench FET® Power MOSFET - 100 % Rg and UIS Tested APPLICATIONS - Load Switch Ro HS PLIANT .. SOT-363 SC-70 (6-LEADS) D 6 D Marking Code AK XX YY G Lot Traceability and Date Code Part # Code S Top View Ordering Information: Si1470DH-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 30 ± 12 5.1 4.0 3.8b, c 3.1b, c 12 10 5 2.3 1.3b, c 2.8 1.8 1.5b, c 1.0b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 m H TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM IAS EAS IS m J A Maximum Power Dissipationa Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 74277 S-62443- Rev. A, 27-Nov-06 .vishay. 1 t ≤ 5 sec Steady State Symbol Rth JA Rth JF Typical 60 34 Maximum 80 45 Unit °C/W Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current .. On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage...