SI1472DH Datasheet | Vishay

FEATURES - Trench FET® Power MOSFET - 100 % Rg and UIS Tested APPLICATIONS - Load Switch for Portable Devices Ro HS PLIANT .. SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code AL XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1472DH-T1-E3 (Lead (Pb-free) D 2 5 D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 30 ± 20 5.6 4.5 4.2b, c 3.4b, c 15 10 5 2.3 1.3b, c 2.8 1.8 1.5b, c 1.0b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 m H TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM IAS EAS IS m J A Maximum Power Dissipationa Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 73891 S-71344- Rev. B, 09-Jul-07 .vishay. 1 t ≤ 5 sec Steady Symbol Rth JA Rth JF Typical 60 34 Maximum 80 45 Unit °C/W New Product Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) r DS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = 2.3 A, di/dt = 100 A/µs IS = 1.8 A 0.8 12.3 5 7.6 4.7 TC = 25 °C VDD = 15 V, RL = 5.4 Ω ID ≅ 2.8 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 15 V, RL = 4.4 Ω ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 4.2 A VDS = 24V, VGS = 4.5 V,...