SI1471DH Datasheet | Vishay

FEATURES - Trench FET® Power MOSFET APPLICATIONS - Load Switch for Portable Devices Ro HS PLIANT .. SOT-363 SC-70 (6-LEADS) S D 1 6 D Marking Code BN XX D 2 5 D Part # Code D P-Channel MOSFET YY Lot Traceability and Date Code 3 Top View Ordering Information: Si1471DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Currenta, b TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipationa, b TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)c, d TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 30 ± 12 -1.6c - 1.6c - 1.6a, b, c - 1.6a, b, c 6.5c - 1.6c - 1.6a, b, c 2.78 1.78 2.5a, b 1a, b - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, d Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 sec. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W. t ≤ 5 sec Steady State Symbol Rth JA Rth JF Typical 60 34 Maximum 80 45 Unit °C/W Document Number: 74468 S-70942-Rev. A, 14-May-07 .vishay. 1 New Product Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current .. On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode...